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IXGX55N120A3H1 - 1200V IGBT

Download the IXGX55N120A3H1 datasheet PDF. This datasheet also covers the IXGK55N120A3H1 variant, as both devices belong to the same 1200v igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction Losses z Anti-Parallel Ultra Fast Diode Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK55N120A3H1-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX50N60B2D1 IGBT
IXGX120N120A3 Ultra-Low Vsat PT IGBT
IXGX120N120B3 High Speed Low Vsat PT IGBT
IXGX120N60A3 Ultra-Low Vsat PT IGBT
IXGX120N60C2 IGBT

Full PDF Text Transcription

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GenX3TM 1200V IGBTs w/ Diode Ultra-Low-Vsat PT IGBTs for up to 3kHz Switching Advance Technical Information IXGK55N120A3H1 IXGX55N120A3H1 VCES = IC110 = VCE(sat) ≤ 1200V 55A 2.3V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 110°C TC = 25°C (Lead RMS Limit) TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 3Ω Clamped Inductive Load TC = 25°C 125 A 55 A 120 A 400 A ICM = 110 A @ 0.8 • VCES 460 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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