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IXGX120N120A3 - Ultra-Low Vsat PT IGBT

Download the IXGX120N120A3 datasheet PDF. This datasheet also covers the IXGK120N120A3 variant, as both devices belong to the same ultra-low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction Losses z Square RBSOA z High Avalanche Capability z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK120N120A3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX120N120B3 High Speed Low Vsat PT IGBT
IXGX120N60A3 Ultra-Low Vsat PT IGBT
IXGX120N60C2 IGBT
IXGX120NC60C2 HiPerFAST IGBT
IXGX320N60A3 600V IGBT

Full PDF Text Transcription

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Preliminary Technical Information GenX3TM A3-Class IGBTs Ultra-Low Vsat PT IGBTs for up to 3kHz Switching IXGK120N120A3 IXGX120N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 120A 2.20V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC110 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 1200 ±20 ±30 V V V V TC = 25°C ( Chip Capability ) TC = 110°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 1Ω Clamped Inductive Load TC = 25°C 240 120 75 600 ICM = 240 @ 0.8 • VCES 830 -55 ... +150 A A A A A W °C 150 -55 ... +150 °C °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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