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IXGX50N60A2D1 - IGBT

Download the IXGX50N60A2D1 datasheet PDF. This datasheet also covers the IXGK50N60A2D1 variant, as both devices belong to the same igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Low on-state voltage IGBT and anti-parallel diode in one package.
  • High current handling capability.
  • MOS Gate turn-on for drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK50N60A2D1-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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IXGX50N60B2D1 IGBT IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX50N60AU1 HiPerFAST IGBT
IXGX50N60AU1S HiPerFAST IGBT
IXGX50N60C2D1 High Speed IGBT
IXGX50N90B2D1 HiPerFAST IGBT
IXGX120N60B IGBT

Full PDF Text Transcription

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Advance Technical Data IGBT with Diode IXGK 50N60A2D1 IXGX 50N60A2D1 V I CES VC25 CE(sat) = 600 V = 75 A = 1.4 V Low Saturation Voltage Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C IF110 TC = 110°C (50N60B2D1 Diode) ICM TC = 25°C, 1 ms SSOA (RBSOA) PC TJ TJM Tstg Md Weight VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ VCE ≤ 600 V TC = 25°C Mounting torque, TO-264 TO-264 PLUS247 Maximum lead temperature for soldering 1.6 mm (0.062 in.
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