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IXGX120N120B3 - High Speed Low Vsat PT IGBT

Download the IXGX120N120B3 datasheet PDF. This datasheet also covers the IXGK120N120B3 variant, as both devices belong to the same high speed low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction and Switching Losses z Square RBSOA z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGK120N120B3-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX120N120A3 Ultra-Low Vsat PT IGBT
IXGX120N60A3 Ultra-Low Vsat PT IGBT
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IXGX120NC60C2 HiPerFAST IGBT
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Full PDF Text Transcription

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Advance Technical Information GenX3TM 1200V IGBTs IXGK120N120B3 IXGX120N120B3 High Speed Low Vsat PT IGBTs for 3-20 kHz Switching VCES = IC90 = VCE(sat) ≤ 1200V 120A 3.0V TO-264 (IXGK) Symbol VCES VCGR VGES VGEM IC25 IC90 ILRMS ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions Maximum Ratings TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient 1200 V 1200 V ±20 V ±30 V TC = 25°C ( Chip Capability ) TC = 90°C Terminal Current Limit TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 2Ω Clamped Inductive Load TC = 25°C 200 A 120 A 120 A 370 A ICM = 240 A VCES < 1200 V 830 W -55 ... +150 °C 150 °C -55 ... +150 °C Maximum Lead Temperature for Soldering 1.6 mm (0.062 in.
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