Datasheet4U Logo Datasheet4U.com

IXGX50N60AU1S - HiPerFAST IGBT

Download the IXGX50N60AU1S datasheet PDF. This datasheet also covers the IXGX50N60AU1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s l Hole-less TO-247 for clip mount High current capability High frequency IGBT and antiparallel FRED in one package Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Fast Recovery Epitaxial Diode (FRED) - soft recovery with low IRM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGX50N60AU1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGX50N60B2D1 IGBT IXYS
IXGX55N120A3H1 1200V IGBT IXYS
IXGX120N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGX120N120B3 High Speed Low Vsat PT IGBT IXYS
IXGX120N60A3 Ultra-Low Vsat PT IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX50N60AU1 HiPerFAST IGBT
IXGX50N60A2D1 IGBT
IXGX50N60C2D1 High Speed IGBT
IXGX50N90B2D1 HiPerFAST IGBT
IXGX120N60B IGBT

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com Preliminary data HiPerFASTTM IGBT with Diode Combi Pack IXGX50N60AU1 IXGX50N60AU1S VCES IC25 VCE(sat) tfi = 600 V = 75 A = 2.7 V = 275 ns TO-247 Hole-less SMD (50N60AU1S) Symbol VCES VCGR VGES VGEM I C25 I C90 I CM SSOA (RBSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25 °C to 150°C TJ = 25 °C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25 °C, limited by leads TC = 90 °C TC = 25 °C, 1 ms VGE = 15 V, T VJ = 125°C, RG = 10 Ω Clamped inductive load, L = 30 µH TC = 25 °C Maximum Ratings 600 600 ±20 ±30 75 50 200 ICM = 100 @ 0.8 VCES 300 DataSheet4U.com -55 ... +150 150 -55 ...
Published: |