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IXGX50N90B2D1 - HiPerFAST IGBT

Download the IXGX50N90B2D1 datasheet PDF. This datasheet also covers the IXGH50N90B2D1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH50N90B2D1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGX50N60B2D1 IGBT IXYS
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IXGX120N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGX120N120B3 High Speed Low Vsat PT IGBT IXYS
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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGX50N60A2D1 IGBT
IXGX50N60AU1 HiPerFAST IGBT
IXGX50N60AU1S HiPerFAST IGBT
IXGX50N60C2D1 High Speed IGBT
IXGX120N60B IGBT

Full PDF Text Transcription

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w w w . D a t a S h e e t 4 U . n e t HiPerFASTTM IGBT with Fast Diode IXGH 50N90B2D1 IXGK 50N90B2D1 IXGX 50N90B2D1 B2-Class High Speed IGBT with Fast Diode Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md FC Weight Mounting torque (TO-247, TO-264) Mounting force (PLUS247) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600V TC = 25°C Maximum Ratings 900 900 ± 20 ± 30 75 50 200 ICM = 100 400 -55 ... +150 150 -55 ... +150 300 V V V V A A A A VCES IC25 VCE(sat) tfi typ = 900 V = 75 A = 2.
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