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IXGT30N60C2 - HiPerFAST IGBT

Download the IXGT30N60C2 datasheet PDF. This datasheet also covers the IXGH30N60C2 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z z z z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Plastic body for 10s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10Nm/lb. in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N60C2_IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT30N60B HiPerFASTTM IGBT IXYS Corporation
IXGT30N60B2 HiPerFAST IGBT IXYS Corporation
IXGT30N60BD1 HiPerFASTTM IGBT with Diode IXYS Corporation
IXGT30N60BU1 HiPerFAST IGBT IXYS Corporation
IXGT30N120B3D1 GenX3 1200V IGBTs IXYS Corporation

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT30N60C2D1 HiPerFAST IGBT
IXGT30N60B2D1 IGBT
IXGT32N120A3 Ultra-Low Vsat PT IGBT
IXGT32N170 High Voltage IGBT
IXGT32N170A High Voltage IGBT

Full PDF Text Transcription

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HiPerFAST TM IGBT IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 600 V = 70 A = 2.7 V = 32 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 190 -55 ... +150 150 -55 ... +150 300 250 V V V V A A A A TO-268 (IXGT) G E C (TAB) TO-247 (IXGH) C (TAB) G C E C = Collector, TAB = Collector W °C °C °C °C °C g g Features z z z z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.
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