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IXGT30N60BU1 - HiPerFAST IGBT

Download the IXGT30N60BU1 datasheet PDF. This datasheet also covers the IXGH30N60BU1 variant, as both devices belong to the same hiperfast igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • Ÿ International standard packages JEDEC TO-247 SMD surface mountable and JEDEC TO-247 AD Ÿ High frequency IGBT and antiparallel FRED in one package Ÿ High current handling capability Ÿ Newest generation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N60BU1_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT30N60B2D1 IGBT IXYS
IXGT30N60C2 HiPerFAST IGBT IXYS
IXGT30N60C2D1 HiPerFAST IGBT IXYS
IXGT32N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGT32N170 High Voltage IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT30N60B HiPerFASTTM IGBT
IXGT30N60B2 HiPerFAST IGBT
IXGT30N60BD1 HiPerFASTTM IGBT with Diode
IXGT30N120B3D1 GenX3 1200V IGBTs
IXGT31N60 Ultra-Low VCE(sat) IGBT

Full PDF Text Transcription

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HiPerFASTTM IGBT with Diode Combi Pack IXGH 30N60BU1 IXGT 30N60BU1 VCES IC25 VCE(sat) tfi TO-268 (IXGT) = 600 V = 60 A = 1.8 V = 100 ns www.DataSheet4U.com Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load, L = 100 µH TC = 25°C Maximum Ratings 600 600 ± 20 ± 30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 1.13/10 TO-268 TO-247 AD 4 6 V V V V A A A A G = Gate, E = Emitter, G E C (TAB) TO-247 AD C (TAB) G C E C = Collector, TAB = Collector W °C °C °C °C Nm/lb.in.
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