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IXGT30N120B3D1 - GenX3 1200V IGBTs

Download the IXGT30N120B3D1 datasheet PDF. This datasheet also covers the IXGH30N120B3D1 variant, as both devices belong to the same genx3 1200v igbts family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N120B3D1-IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT30N60B HiPerFASTTM IGBT
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Full PDF Text Transcription

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GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load TC = 25°C Mounting torque (TO-247) Maximum lead temperature for soldering 1.6mm (0.062 in.) from case for 10s TO-247 TO-268 Maximum Ratings 1200 1200 V V ±20 ±30 30 28 150 ICM = 60 @ 0.8 • VCE 300 V V A A A A W -55 ... +150 150 -55 ... +150 1.13 / 10 300 260 6 4 °C °C °C Nm/lb.in.
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