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IXGT30N60B - HiPerFASTTM IGBT

Download the IXGT30N60B datasheet PDF. This datasheet also covers the IXGH30N60B variant, as both devices belong to the same hiperfasttm igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD.
  • High current handling capability.
  • Latest generation.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH30N60B_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IXGT30N60B2D1 IGBT IXYS
IXGT30N60C2 HiPerFAST IGBT IXYS
IXGT30N60C2D1 HiPerFAST IGBT IXYS
IXGT32N120A3 Ultra-Low Vsat PT IGBT IXYS
IXGT32N170 High Voltage IGBT IXYS

Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT30N60B2 HiPerFAST IGBT
IXGT30N60BD1 HiPerFASTTM IGBT with Diode
IXGT30N60BU1 HiPerFAST IGBT
IXGT30N120B3D1 GenX3 1200V IGBTs
IXGT31N60 Ultra-Low VCE(sat) IGBT

Full PDF Text Transcription

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HiPerFASTTM IGBT IXGH30N60B IXGT30N60B VCES IC25 VCE(sat) tfi = 600 V = 60 A = 1.8 V = 100 ns www.DataSheet4U.com Symbol VCES VCGR Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 W Clamped inductive load, L = 100 mH TC = 25°C Maximum Ratings 600 600 ±20 ±30 60 30 120 ICM = 60 @ 0.8 VCES 200 -55 ... +150 150 -55 ... +150 300 V V V V A A A A W °C °C °C °C TO-247 AD (IXGH) VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg G C (TAB) C E TO-268 (D3) (IXGT) G E (TAB) G = Gate, E = Emitter, C = Collector, TAB = Collector Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) 1.13/10 Nm/lb.in.
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