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IXGT32N120A3 - Ultra-Low Vsat PT IGBT

Download the IXGT32N120A3 datasheet PDF. This datasheet also covers the IXGH32N120A3 variant, as both devices belong to the same ultra-low vsat pt igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z Optimized for Low Conduction Losses z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH32N120A3-IXYS.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT32N170 High Voltage IGBT
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Full PDF Text Transcription

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GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-247) TO-247 TO-268 Maximum Ratings 1200 V 1200 V ±20 V ±30 V 75 A 32 A 230 A 20 A 120 mJ ICM = 150 A VCE ≤ 0.8 • VCES 300 W -55 ... +150 °C 150 °C -55 ... +150 °C 300 °C 260 °C 1.13/10 Nm/lb.in. 6.0 g 4.
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