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IXGT32N170A - High Voltage IGBT

Download the IXGT32N170A datasheet PDF. This datasheet also covers the IXGH32N170A variant, as both devices belong to the same high voltage igbt family and are provided as variant models within a single manufacturer datasheet.

Features

  • z International standard packages JEDEC TO-268 and JEDEC TO-247 AD z High current handling capability z MOS Gate turn-on - drive simplicity z Rugged NPT structure z Molding epoxies meet UL 94 V-0 flammability classification.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXGH32N170A-IXYS.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by IXYS (Littelfuse)

Part Number Description
IXGT32N170 High Voltage IGBT
IXGT32N120A3 Ultra-Low Vsat PT IGBT
IXGT32N90B2 High Speed IGBTs
IXGT32N90B2D1 IGBT
IXGT30N60B2D1 IGBT

Full PDF Text Transcription

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High Voltage IGBT IXGH 32N170A IXGT 32N170A VCES IC25 VCE(sat) tfi(typ) = 1700 V = 32 A = 5.0 V = 50 ns Symbol Test Conditions Maximum Ratings VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient 1700 1700 ±20 ±30 TC = 25°C TC = 90°C TC = 25°C, 1 ms 32 21 110 VGE = 15 V, TVJ = 125°C, RG = 5Ω Clamped inductive load ICM = 70 @ 0.8 VCES TJ = 125°C, VCE = 1200 V; VGE = 15 V, RG = 10Ω 10 V V V V A A A A µs PC TC = 25°C TJ TJM Tstg 350 -55 ... +150 150 -55 ... +150 W °C °C °C Md Mounting torque (M3) (TO-247) 1.13/10Nm/lb.in. Maximum lead temperature for soldering 1.6 mm (0.062 in.
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