Click to expand full text
Advance Technical Information
www.DataSheet4U.com
GigaMOSTM TrenchT2 HiperFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN320N17T2
RDS(on) ≤ ≤ trr
VDSS ID25
= =
170V 260A 5.2mΩ 150ns
miniBLOC, SOT-227 E153432
S
Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C
Maximum Ratings 170 170 ±20 ±30 260 200 800 100 5 20 1070 -55 ... +175 175 -55 ... +175 V V V V A A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in.
IXFN320N17T2 Datasheet
