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Advanced Technical Information
HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Symbol VDSS VDGR VGS VGSM ID25 IL(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL £ 1 mA t = 1 min t=1s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C, Chip capability Terminal current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
IXFN 340N06
VDSS = 60 V ID25 = 340 A 3 mW RDS(on) = trr £ 250 ns
D
G S
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Maximum Ratings 60 60 ± 20 ± 30 340 100 1360 200 64 4 5 700 -55 ... +150 150 -55 ...
IXFN340N06 Datasheet
