Datasheet4U Logo Datasheet4U.com

IXFN300N10P - Power MOSFET

Datasheet Summary

Features

  • International Standard Package.
  • miniBLOC, with Aluminium Nitride Isolation.
  • Low RDS(on) and QG.
  • Avalanche Rated.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Datasheet preview – IXFN300N10P

Datasheet Details

Part number IXFN300N10P
Manufacturer IXYS Corporation
File Size 128.42 KB
Description Power MOSFET
Datasheet download datasheet IXFN300N10P Datasheet
Additional preview pages of the IXFN300N10P datasheet.
Other Datasheets by IXYS Corporation

Full PDF Text Transcription

Click to expand full text
PolarTM HiPerFETTM Power MOSFET IXFN300N10P N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL VISOL M d Weight Test Conditions TJ = 25C to 175C TJ = 25C to 175C, RGS = 1M Continuous Transient TC = 25C External Lead Current Limit TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  175C TC = 25C 1.6mm (0.062 in.) from Case for 10s 50/60 Hz, RMS IISOL  1mA Mounting Torque Terminal Connection Torque t = 1min t = 1s Maximum Ratings 100 V 100 V 20 V  30 V 295 A 200 A 900 A 100 A 3 J 20 1070 -55 ... +175 175 -55 ... +175 300 V/ns W C C C C 2500 3000 1.5/13 1.3/11.5 V~ V~ Nm/lb.in Nm/lb.
Published: |