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IXFN32N80P - PolarHV HiPerFET Power MOSFET

Datasheet Summary

Features

  • International standard package.
  • Encapsulating epoxy meets 1.6 mm (0.062 in. ) from case for 10 s 50/60 Hz, RMS t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque 300 2500 3000 UL 94 V-0, flammability classification.
  • miniBLOC with Aluminium nitride l l Md Weight 1.5 / 13 Nm/lb. in. 1.5 / 13 Nm/lb. in. 30 g l isolation Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test.

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Datasheet Details

Part number IXFN32N80P
Manufacturer IXYS Corporation
File Size 111.87 KB
Description PolarHV HiPerFET Power MOSFET
Datasheet download datasheet IXFN32N80P Datasheet
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PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN32N80P VDSS ID25 RDS(on) trr = 800 V = 25 A ≤ 270 mΩ ≤ 250 ns Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Maximum Ratings 800 800 ±30 ±40 29 250 30 100 5 10 625 -55 ... +150 150 -55 ...
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