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PolarTM HiPerFETTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFN32N120P
VDSS = 1200V ID25 = 32A RDS(on) ≤ 310mΩ ≤ 300ns trr
miniBLOC E153432
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 1200 1200 ±30 ±40 32 100 16 2 20 1000 -55 ... +150 150 -55 ... +150 V V V V A A A J V/ns W °C °C °C °C °C V~ V~ Nm/lb.in. Nm/lb.in. g Advantages
z
S G
S D G = Gate S = Source D = Drain
Either Source Terminal S can be used as the Source Terminal or the Kelvin Source ( Gate Return ) Terminal.
Features
z z
1.
IXFN32N120P Datasheet
