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HiPerFETTM Power MOSFETs Single DieMOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr
Preliminary data sheet
IXFN 34N80
D
VDSS = 800 V ID25 = 34 A RDS(on) = 0.24 W trr £ 250 ns
S
Symbol
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Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C
Maximum Ratings 800 800 ±20 ±30 34 136 34 64 3 5 600 -55 ... +150 150 -55 ...
IXFN34N80 Datasheet
