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HiPerFETTM Power MOSFETs Q-Class
IXFH 32N50Q IXFT 32N50Q
VDSS
ID25
RDS(on)
500 V 32 A 0.16 Ω 500 V 32 A 0.16 Ω
trr ≤ 250 ns
N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C; pulse width limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 500 500 ±20 ±30 32 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A mJ mJ V/ns W °C °C °C °C Nm/lb.in. g g
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate S = Source
D = Drain TAB = Drain
1.6 mm (0.
IXFH32N50Q Datasheet
