IXFH30N85X - N-Channel MOSFET

Features

With TO-247 packaging.
With low gate drive requirements.
Low switching loss.
Low on-state resistance.
Easy to drive.
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

INCHANGE

Datasheet Details

Part number	IXFH30N85X
Manufacturer	INCHANGE
File Size	208.54 KB
Description	N-Channel MOSFET
Datasheet	IXFH30N85X Datasheet
Additional preview pages of the IXFH30N85X datasheet.

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Full PDF Text Transcription

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IXFH30N85X ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 850 VGSS Gate-Source Voltage ±30 ID Drain Current-Continuous 30 IDM Drain Current-Single Pulsed 60 PD Total Dissipation 695 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance MAX 0.18 UNIT ℃/W isc website：www.

Published: Sep 3, 2020 |