IXFH320N10T2 - Power MOSFET

Features

z International Standard Packages z High Current Handling Capability z Fast Intrinsic Diode z Avalanche Rated z Fast Intrinsic Diode z Low RDS(on) Advantages z Easy to Mount z Space Savings z High Power Density.

IXYS Corporation

Datasheet Details

Part number	IXFH320N10T2
Manufacturer	IXYS Corporation
File Size	187.09 KB
Description	Power MOSFET
Datasheet	IXFH320N10T2 Datasheet
Additional preview pages of the IXFH320N10T2 datasheet.

📁 Similar Datasheet

IXFH320N10T2 - N-Channel MOSFET (INCHANGE)
IXFH32N100X - Power MOSFET (IXYS)
IXFH32N50 - HiPerFET Power MOSFETs (IXYS)
IXFH32N50Q - Power MOSFET (IXYS)
IXFH30N40Q - Power MOSFET (IXYS)
IXFH30N50 - HiPerFET Power MOSFETs (IXYS)
IXFH30N50 - Power MOSFET (IXYS)
IXFH30N50P - Power MOSFET (IXYS)
IXFH30N60P - Power MOSFET (IXYS)
IXFH30N60Q - Power MOSFET (IXYS)

Other Datasheets by IXYS Corporation

IXFH30N50Q3 - Power MOSFET
IXFH340N075T2 - Power MOSFET
IXFH35N30 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH35N30 - Power MOSFET
IXFH102N15T - Power MOSFET
IXFH10N100 - Power MOSFET
IXFH10N60 - (IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH10N65 - Power MOSFET

Full PDF Text Transcription

Click to expand full text

TrenchT2TM HiperFETTM Power MOSFET IXFH320N10T2 IXFT320N10T2 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode VDSS = ID25 = RDS(on) ≤ 100V 320A 3.5mΩ TO-247 (IXFH) Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C (Chip Capability) Lead Current Limit, RMS TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 175°C TC = 25°C 1.6mm (0.062in.

Published: May 30, 2011 |