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HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
VDSS IXFH/IXFT 30N50 IXFH/IXFT 32N50 500 V 500 V
ID25 30 A 32 A
RDS(on) 0.16 W 0.15 W
trr £ 250 ns
TO-247 AD (IXFH)
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAS EAR dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C pulse width limited by TJM TC = 25°C TC = 25°C ID = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C ±30 30N50 32N50 30N50 32N50 30N50 32N50
Maximum Ratings 500 500 ±20 V 30 32 120 128 30 32 1.5 45 5 360 -55 ... +150 150 -55 ... +150 V V V
D (TAB)
A A A A A A J mJ V/ns W °C °C °C °C Nm/lb.in.
IXFH32N50 Datasheet
