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Advance Technical Information
HiperFETTM Power MOSFETs Q3-Class
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFT30N50Q3 IXFH30N50Q3
VDSS ID25
RDS(on)
= 500V = 30A ≤ 200mΩ
TO-268 (IXFT) G S D (Tab) V V V V A A A J V/ns W °C °C °C °C °C Nm/lb.in. g g
z z z z z
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
Maximum Ratings 500 500 ± 20 ± 30 30 90 30 1.5 50 690 -55 ... +150 150 -55 ...
IXFH30N50Q3 Datasheet
