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X-Class HiPerFETTM Power MOSFET
Advance Technical Information
IXFT30N85XHV IXFH30N85X
VDSS =
ID25 = RDS(on)
850V 30A 220m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
TO-268HV (IXFT)
Symbol
VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt
PD TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268HV TO-247
Maximum Ratings
850
V
850
V
30
V
40
V
30
A
60
A
15
A
1
J
50
V/ns
695
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.
IXFH30N85X Datasheet
