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X-Class HiPerFETTM Power MOSFET
Preliminary Technical Information
IXFT30N60X IXFQ30N60X IXFH30N60X
VDSS = ID25 = RDS(on)
600V 30A 155m
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150°C TC = 25C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247 & TO-3P) TO-268 TO-3P TO-247
Maximum Ratings 600 600
V V
30 V 40 V
30 A 60 A
10 A 1J
50 V/ns
500 W
-55 ... +150 150
-55 ... +150
C C C
300 °C 260 °C
1.13 / 10
Nm/lb.in
4.0 g 5.5 g 6.
IXFH30N60X Datasheet
