Click to expand full text
PolarHTTM Power MOSFET
IXTK 200N10P
N-Channel Enhancement Mode Avalanche Rated
V = 100 V DSS
ID25 = 200 A RDS(on) ≤ 7.5 mΩ
Symbol
VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM I
AR
EAR E
AS
dv/dt
PD TJ TJM Tstg
TL T
SOLD
Md Weight
Test Conditions
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ
Continuous Transient
TC = 25° C External lead current limit
TC = 25° C, pulse width limited by TJM
T C
= 25° C
TC = 25° C
T C
= 25° C
IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω
TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
Mounting torque
Maximum Ratings
100
V
100
V
±20
V
±30
V
200
A
75
A
400
A
60
A
100
mJ
4
J
10
V/ns
800
W
-55 ... +175
°C
175
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10 Nm/lb.in.
IXTK200N10P Datasheet
