IXTK20N150 - High Voltage Power MOSFETs

Datasheet Summary

Features

z Avalanche Rated z Fast Intrinsic Diode z Guaranteed FBSOA at 75°C z Low Package Inductance Advantages z Easy to Mount z Space Savings.

IXYS

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Datasheet Details

Part number	IXTK20N150
Manufacturer	IXYS
File Size	137.67 KB
Description	High Voltage Power MOSFETs
Datasheet	IXTK20N150 Datasheet
Additional preview pages of the IXTK20N150 datasheet.

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Full PDF Text Transcription

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High Voltage Power MOSFETs w/ Extended FBSOA N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA IXTK20N150 IXTX20N150 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force (PLUS247) TO-264 PLUS247 Maximum Ratings 1500 1500 V V ±30 V ±40 V 20 A 50 A 10 A 2.5 J 5 V/ns 1250 W -55 to +150 150 -55 to +150 °C °C °C 300 °C 260 °C 1.13/10 20..120 /4.5..27 Nm/lb.in. N/lb.

Published: Jun 5, 2015 |