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IXTK200N10L2 - Power MOSFET

This page provides the datasheet information for the IXTK200N10L2, a member of the IXTX200N10L2 Power MOSFET family.

Datasheet Summary

Features

  • z z z G D S Tab TC = 25°C (Chip Capability) Lead Current Limit, (RMS) TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C PLUS247(IXTX) G D S Tab G = Gate S = Source D = Drain Tab = Drain Designed for Linear Operation Avalanche Rated Guaranteed FBSOA at 75°C Advantages z z z Easy to Mount Space Savings High Power Density Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 3mA VGS = ±20V,.

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Datasheet Details

Part number IXTK200N10L2
Manufacturer IXYS
File Size 152.40 KB
Description Power MOSFET
Datasheet download datasheet IXTK200N10L2 Datasheet
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Full PDF Text Transcription

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Advance Technical Information Linear L2TM Power MOSFET w/ Extended FBSOA N-Channel Enhancement Mode Guaranteed FBSOA Avalanche Rated Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md FC Weight 1.6mm (0.063 in.) from Case for 10s Plastic Body for 10s Mounting Torque (IXTK) Mounting Force (IXTX) TO-264 PLUS247 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient IXTK200N10L2 IXTX200N10L2 VDSS ID25 RDS(on) = 100V = 200A < 11mΩ TO-264 (IXTK) Maximum Ratings 100 100 ±20 ±30 200 160 500 100 5 1040 -55...+150 150 -55...+150 300 260 1.13/10 20..120 / 4.5..27 10 6 V V V V A A A A J W °C °C °C °C °C Nm/lb.in. N/lb.
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