Click to expand full text
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXTK120N25P
Symbol VDSS VDGR VGSS VGSM ID25 ILRMS IDM IA EAS
dV/dt
PD TJ TJM Tstg TL TSOLD
Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C Terminal Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C
1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque TO-264
Maximum Ratings
250
V
250
V
± 20
V
± 30
V
120
A
75
A
300
A
60
A
2.5
J
10 700 -55 ... +150 150 -55 ... +150 300 260
V/ns
W
°C °C °C °C °C
1.13/10 10
Nm/lb.in.
IXTK120N25P Datasheet
