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High Current Mega MOSTMFET
N-Channel Enhancement Mode
IXTK 128N15
VDSS ID25
RDS(on)
= 150 V = 128 A = 15 mΩ
Symbol VDSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C MOSFET chip capability External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C
Maximum Ratings 150 150 ± 20 ± 30 128 75 512 90 60 2.5 5 540 -55 ... +150 150 -55 ...
IXTK128N15 Datasheet
