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PolarHTTM Power MOSFET
IXTK 140N20P
N-Channel Enhancement Mode Avalanche Rated
VDSS = 200 V ID25 = 140 A ≤RDS(on) 18 mΩ
Symbol
Test Conditions
Maximum Ratings TO-264 (IXTK)
VDSS VDGR
VGS VGSM
ID25 ID(RMS) IDM IAR EAR EAS
dv/dt
PD TJ TJM Tstg
TL TSOLD Md Weight
TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient
TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C TC = 25° C TC = 25° C IS ≤IDM, di/dt ≤100 A/µs, VDD ≤VDSS, TJ ≤150° C, RG = 4 Ω TC = 25° C
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Mounting torque
200 V 200 V
±20 V ±30 V
140 A 75 A
280 A 60 A
100 mJ 4J
10 V/ns
800 W
-55 ... +175 175
-55 ... +150
°C °C °C
300 ° C 260 ° C 1.13/10 Nm/lb.in.
IXTK140N20P Datasheet
