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IXFT14N80P - PolarHV HiPerFET Power MOSFET

Download the IXFT14N80P datasheet PDF. This datasheet also covers the IXFH14N80P variant, as both devices belong to the same polarhv hiperfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • z z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % 720 mΩ Easy to mount Space savings High power density DS99593E(07/06) www. DataSheet4U. net © 2006 IXYS All rights reserved IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min.

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Note: The manufacturer provides a single datasheet file (IXFH14N80P_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFT14N80P (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFT14N80P. For precise diagrams, and layout, please refer to the original PDF.

PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS...

View more extracted text
14N80P IXFQ 14N80P IXFT 14N80P IXFV 14N80P IXFV 14N80PS VDSS ID25 RDS(on) trr = 800 V = 14 A ≤ 720 mΩ ≤ 250 ms TO-247 (IXFH) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω TC = 25°C Maximum Ratings 800 800 ± 30 ± 40 14 40 7 30 500 10 400 -55 ... +150 150 -55 ... +150 V V V V A A A mJ mJ V/ns W °C °C °C °C °C PLUS220 (IXFV) G D (TAB) D (TAB) TO-3P (IXFQ) S TO-26

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