G = Gate S = Source
S D = Drain TAB = Drain
(TAB)
1.6 mm (0.062 in. ) from case for 10 s Mounting torque TO-247 TO-268
300
1.13/10 Nm/lb. in. 6 4 g g
Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 3 mA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 25°C TJ = 125°C
Characteristic Values Min. Typ. Max. 800 2.0 4.5 ±100 25 1 0.60 V V nA mA mA W
IXYS advanced low Qg pro.
Full PDF Text Transcription for IXFT15N80Q (Reference)
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IXFT15N80Q. For precise diagrams, and layout, please refer to the original PDF.
HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg IXFH 15N80Q IXFT 15N80Q VDSS ID25 RDS(on) = = = 800 V 15 A 0.60 W trr £ 25...
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15N80Q IXFT 15N80Q VDSS ID25 RDS(on) = = = 800 V 15 A 0.60 W trr £ 250 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 800 800 ±20 ±30 15 60 15 30 1.0 5 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns TO-247 AD (IXFH) (TAB) TO-268 (D3) (IXFT) Case Style G W °C °C °C °C Features • • • • G = Gate S = Source S D = Drain TAB = Drain
IXFT15N80Q Datasheet
