l International standard packages l Unclamped Inductive Switching (UIS)
rated l Low package inductance
- easy to drive and to protect
Symbol
Test Conditions
(T J
=
25°
C,
unless
otherwise
specified)
BVDSS
VGS = 0 V, ID = 250 µA
VGS(th)
VDS = VGS, ID = 4.0 mA
I
GSS
V GS
=
±20
V, DC
V DS
=
0
IDSS
VDS = VDSS
VGS = 0 V
RDS(on)
VGS = 10 V, ID = 0.5 ID25 VGS = 15 V, ID = 300 A Note 1
Characteristic Values Min. Typ. Max. 100
V
3.0
5.0 V
Advantages
l Easy to mount l Space.
Full PDF Text Transcription for IXFT140N10P (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
IXFT140N10P. For precise diagrams, and layout, please refer to the original PDF.
PolarHVTM HiPerFET IXFH 140N10P Power MOSFETs IXFT 140N10P N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated V DSS ID25 RDS(on) trr = 100 V = 140 A ≤ 11 mΩ ...
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Diode Avalanche Rated V DSS ID25 RDS(on) trr = 100 V = 140 A ≤ 11 mΩ ≤ 150 ns Symbol V DSS VDGR VGS VGSM ID25 ID(RMS) IDM IAR E AR EAS dv/dt PD TJ T JM Tstg TL TSOLD M d Weight Test Conditions T J = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ Continuous Transient TC = 25° C External lead current limit TC = 25° C, pulse width limited by TJM TC = 25° C T C = 25° C TC = 25° C I S ≤ I, DM di/dt ≤ 100 A/µs, V DD ≤ V, DSS T J ≤150° C, R G = 4 Ω TC = 25° C 1.6 mm (0.062 in.
IXFT140N10P Datasheet
