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IXFT15N100Q - HiPerFET Power MOSFETs

Key Features

  • z IXYS advanced low Qg process z International standard packages z Epoxy meet UL 94 V-0, flammability classification z Low RDS (on) low Qg z Avalanche energy and current rated z Fast intrinsic rectifier Advantages z Easy to mount z Space savings z High power density © 2001 IXYS All rights reserved 98627A (9/01) IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. TO-247 AD (IXFH) Outline g fs Ciss Coss.

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HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) =...

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15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = 1000 V ID25 = 15 A RDS(on) = 0.7 Ω trr ≤ 250 ns Preliminary data sheet TO-247 AD (IXFH) Symbol VDSS V DGR VGS VGSM ID25 IDM I AR EAR E AS dv/dt PD TJ TJM Tstg TL M d Weight Symbol VDSS VGS(th) I GSS IDSS RDS(on) Test Conditions TJ = 25°C to 150°C T J = 25°C to 150°C; R GS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM T C = 25°C TC = 25°C T C = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, T J ≤ 150°C, R G = 2 Ω TC = 25°C 1.6 mm (0.063 in) from case for 10 s Maximum Ratings 1000 V 1000 V ±20 V ±30 V 15 A 60 A 15 A 45 mJ 1.5 J 5 V/ns 360 W -55 ...