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IXFT15N100Q3 - Power MOSFET

Download the IXFT15N100Q3 datasheet PDF. This datasheet also covers the IXFH15N100Q3 variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low Intrinsic Gate Resistance.
  • International Standard Packages.
  • Low Package Inductance.
  • Fast Intrinsic Rectifier.
  • Low RDS(on) and QG Advantages.
  • High Power Density.
  • Easy to Mount.
  • Space Savings.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IXFH15N100Q3_IXYSCorporation.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for IXFT15N100Q3 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for IXFT15N100Q3. For precise diagrams, and layout, please refer to the original PDF.

Q3-Class HiperFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM I...

View more extracted text
IXFT15N100Q3 IXFH15N100Q3 D G S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings 1000 V 1000 V  30 V  40 V 15 A 45 A 7.5 A 1.0 J 50 V/ns 690 W -55 ... +150 150 -55 ... +150  C  C  C 300 °C 260 °C 1.13 / 10 4.0 6.0 Nm/lb.in.

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