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HiPerFETTM Power MOSFETs Single Die MOSFET
N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low t
rr
IXFN 130N30
D G
V = 300 V DSS
ID25 = 130 A = RDS(on) 22 mΩ trr < 250 ns
Symbol
VDSS VDGR VGS VGSM ID25 IL(RMS) I
DM
I
AR
EAR EAS dv/dt
P D
TJ TJM Tstg VISOL
Md
Weight
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient
TC = 25°C Terminal (current limit)
T C
=
25°C,
pulse
width
limited
by
T JM
T C
= 25°C
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω
T C
= 25°C
50/60 Hz, RMS t = 1 min
I
ISOL
≤
1
mA
t=1s
Mounting torque Terminal connection torque
S
S
Maximum Ratings
300
V
300
V
±20
V
±30
V
130
A
100
A
520
A
100
A
85
mJ
4
J
5 V/ns
700
W
-55 ...
IXFN130N30 Datasheet
