Datasheet4U Logo Datasheet4U.com

IS42SM32160C - 512Mb Mobile Synchronous DRAM

Datasheet Summary

Description

ISSI's IS42SM/RM32160C is a 512Mb Mobile Synchronous DRAM configured as a quad 4M x32 DRAM.

It achieves high-speed data transfer using a pipeline architecture with a synchronous interface.

All inputs and outputs signals are registered on the rising edge of the clock input, CLK.

Features

  • Fully synchronous; all signals referenced to a positive clock edge.
  • Internal bank for hiding row access and pre- charge.
  • Programmable CAS latency: 2, 3.
  • Programmable Burst Length: 1, 2, 4, 8, and Full Page.
  • Programmable Burst Sequence:.
  • Sequential and Interleave.
  • Auto Refresh (CBR).
  • TCSR (Temperature Compensated Self Refresh).
  • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full.
  • De.

📥 Download Datasheet

Datasheet preview – IS42SM32160C

Datasheet Details

Part number IS42SM32160C
Manufacturer ISSI
File Size 219.48 KB
Description 512Mb Mobile Synchronous DRAM
Datasheet download datasheet IS42SM32160C Datasheet
Additional preview pages of the IS42SM32160C datasheet.

📁 Similar Datasheet

  • IS42S16100 - 512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM (Integrated Silicon Solution)
  • IS42S16100E - 512K Words x 16 Bits x 2 Banks 16Mb SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
  • IS42S16128 - 128K words x 16 Bits x 2 Banks SDRAM (Integrated Silicon)
  • IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
  • IS42S16160B - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
  • IS42S16160D - 256-MBIT SYNCHRONOUS DRAM (Integrated Silicon Solution)
  • IS42S16320B - 32M x 16 512Mb SYNCHRONOUS DRAM (Integrated Silicon Solution)
  • IS42S16400 - SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
  • IS42S16400D - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
  • IS42S16400F - 1 Meg Bits x 16 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM (Integrated Silicon Solution)
Other Datasheets by ISSI
  • IS42SM32160E - 4M x 32Bits x 4Banks Mobile Synchronous DRAM
  • IS42SM32100C - 512K x 32Bits x 2Banks Low Power Synchronous DRAM
  • IS42SM32100D - 512K x 32Bits x 2Banks Low Power Synchronous DRAM
  • IS42SM32200G - 512K x 32Bits x 4Banks Low Power Synchronous DRAM
  • IS42SM32200K - 512K x 32Bits x 4Banks Mobile Synchronous DRAM
  • IS42SM32200M - 512K x 32Bits x 4Banks Mobile Synchronous DRAM
  • IS42SM32400E - 128Mb Mobile Synchronous DRAM
  • IS42SM32400G - 1M x 32Bits x 4Banks Mobile Synchronous DRAM

Full PDF Text Transcription

Click to expand full text
IS42SM32160C IS42RM32160C 16Mx32 512Mb Mobile Synchronous DRAM NOVEMBER 2010 FEATURES: • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access and pre- charge • Programmable CAS latency: 2, 3 • Programmable Burst Length: 1, 2, 4, 8, and Full Page • Programmable Burst Sequence: • Sequential and Interleave • Auto Refresh (CBR) • TCSR (Temperature Compensated Self Refresh) • PASR (Partial Arrays Self Refresh): 1/16, 1/8, 1/4, 1/2, and Full • Deep Power Down Mode (DPD) • Driver Strength Control (DS): 1/4, 1/2, and Full OPTIONS: • Configuration: 16Mx32 • Power Supply: IS42SMxxx - Vdd/Vddq = 3.3V IS42RMxxx - Vdd/Vddq = 2.
Published: |