IS42S16160 - 16Meg x16 256-MBIT SYNCHRONOUS DRAM

Datasheet Summary

Description

A0-A12 Row Address Input A0-A8 Column Address Input BA0, BA1 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input CKE Clock Enable CS Chip Select RAS Row Address Strobe Command CAS Column Address Strobe Command WE DQML DQMH Vdd Vss Vddq Vssq

Features

Clock frequency: 166, 143, 133 MHz.
Fully synchronous; all signals referenced to a positive clock edge.
Internal bank for hiding row access/precharge.
Power supply IS42S16160 Vdd Vddq 3.3V 3.3V.
LVTTL interface.
Programmable burst length.
(1, 2, 4, 8, full page).
Programmable burst sequence: Sequential/Interleave.
Auto Refresh (CBR).
Self Refresh.
8K refresh cyc.

Integrated Silicon Solution

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Datasheet Details

Part number	IS42S16160
Manufacturer	Integrated Silicon Solution
File Size	814.68 KB
Description	16Meg x16 256-MBIT SYNCHRONOUS DRAM
Datasheet	IS42S16160 Datasheet
Additional preview pages of the IS42S16160 datasheet.

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Full PDF Text Transcription

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IS42S16160 16Meg x16 256-MBIT SYNCHRONOUS DRAM SEPTEMBER 2009 FEATURES • Clock frequency: 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge • Power supply IS42S16160 Vdd Vddq 3.3V 3.

Published: Sep 12, 2015 |