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BUR51 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) High Current Capability High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching and linear in mili

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·High Current Capability ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage ,high speed,power switching and linear in military and industrial equipment.
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