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BUR20 - NPN Transistor

Description

High DC Current Gain-hFE=10(Min)@IC = 50A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS

circuits applications.

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isc Silicon NPN Power Transistor DESCRIPTION ·High DC Current Gain-hFE=10(Min)@IC = 50A ·Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC = 25A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in high power amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 125 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 50 A IB Base Current-Continuous 15 A PC Collector Power Dissipation @TC=25℃ 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
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