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BUR50 - NPN Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) High Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is cri

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isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 125V(Min) ·High Current Capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low voltage ,high speed,power switching in Inductive circuits where fall time is critical.It is particularly suited for battery switch mode application such as switching regulations.
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