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BUR22 - NPN Transistor

Description

Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 20A High Switching Speed High DC Current Gain- : hFE= 10(Min.) @IC= 20A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current, high speed, high

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isc Silicon NPN Power Transistor DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= 1.0V (Max.) @IC= 20A ·High Switching Speed ·High DC Current Gain- : hFE= 10(Min.) @IC= 20A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high current, high speed, high power applications.
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