Datasheet4U Logo Datasheet4U.com

BUR52 - HIGH CURRENT NPN SILICON TRANSISTOR

Description

The BUR52 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUR52 Silicon NPN Power Transistor Inchange Semiconductor
BUR52 HIGH CURRENT NPN SILICON Seme LAB
BUR52 HIGH CURRENT NPN SILICON TRANSISTORS Comset Semiconductors
BUR50 NPN Transistor INCHANGE
BUR50 Bipolar NPN Device Seme LAB

Other Datasheets by STMicroelectronics

Part Number Description
BUR51 HIGH CURRENT NPN SILICON TRANSISTOR

Full PDF Text Transcription

Click to expand full text
® BUR52 HIGH CURRENT NPN SILICON TRANSISTOR s STMicroelectronics PREFERRED SALESTYPE s NPN TRANSISTOR s MAINTAINS GOOD SWITCHING PERFORMANCE EVEN WITHOUT NEGATIVE BASE DRIVE APPLICATIONS s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUR52 is a silicon Multiepitaxial Planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCBO VCEO VEBO IC ICM IB Ptot Tstg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp = 10 ms) Base Current Total Dissipation at Tc ≤ 25 oC Storage Temperature Max.
Published: |