Datasheet4U Logo Datasheet4U.com

BUR52 - Silicon NPN Power Transistor

Description

Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) High Current Capability Low Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 25A APPLICATIONS

and industrial equipment.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
BUR52 HIGH CURRENT NPN SILICON TRANSISTOR STMicroelectronics
BUR52 HIGH CURRENT NPN SILICON Seme LAB
BUR52 HIGH CURRENT NPN SILICON TRANSISTORS Comset Semiconductors
BUR50 NPN Transistor INCHANGE
BUR50 Bipolar NPN Device Seme LAB

Other Datasheets by Inchange Semiconductor

Part Number Description
BUR54 Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification BUR52 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 250V(Min) ·High Current Capability ·Low Saturation Voltage : VCE(sat)= 1.0V(Max)@ IC= 25A APPLICATIONS ·Designed for switching and linear applications in military and industrial equipment.
Published: |