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HMBT8599 - PNP Transistor

Download the HMBT8599 datasheet PDF. This datasheet also covers the HMBT8599_Hi variant, as both devices belong to the same pnp transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Amplifier Transistor Absolute Maximum Ratings SOT-23 Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW Maximum Voltages and Currents (TA=25°C) VCBO Collector

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Note: The manufacturer provides a single datasheet file (HMBT8599_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT8599
Manufacturer Hi-Sincerity Mocroelectronics
File Size 38.17 KB
Description PNP Transistor
Datasheet download datasheet HMBT8599 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT8599 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6811 Issued Date : 1997.12.31 Revised Date : 2004.09.08 Page No. : 1/4 Description Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)...............................................................................................................
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