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HMBT8050 - NPN Transistor

Download the HMBT8050 datasheet PDF. This datasheet also covers the HMBT8050_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT8050 is designed for general purpose amplifier applications.

Features

  • High DC Current hFE=150-400 at IC=150mA.
  • Complementary to HMBT8550 SOT-23 Absolute Maximum Ratings.
  • Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum.
  • Maximum Power Dissipation Total Power Dissipation (TA=25°C) 225 mW.
  • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT8050_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT8050
Manufacturer Hi-Sincerity Mocroelectronics
File Size 37.90 KB
Description NPN Transistor
Datasheet download datasheet HMBT8050 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT8050 NPN EPITAXIAL TRANSISTOR Spec. No. : HE6812 Issued Date : 1992.08.25 Revised Date : 2004.08.17 Page No. : 1/4 Description The HMBT8050 is designed for general purpose amplifier applications. Features • High DC Current hFE=150-400 at IC=150mA • Complementary to HMBT8550 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C).......................................................
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