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HMBT1015 - PNP EPITAXIAL PLANAR TRANSISTOR

Download the HMBT1015 datasheet PDF. This datasheet also covers the HMBT1015_Hi variant, as both devices belong to the same pnp epitaxial planar transistor family and are provided as variant models within a single manufacturer datasheet.

Description

The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature 150 °C Maximum Maximum Power Dissipation Total Power Dissipation (T

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Note: The manufacturer provides a single datasheet file (HMBT1015_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT1015
Manufacturer Hi-Sincerity Mocroelectronics
File Size 40.09 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HMBT1015 Datasheet

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HMBT1015 PNP EPITAXIAL PLANAR TRANSISTOR Spec. No. : HE6804 Issued Date : 1992.08.25 Revised Date : 2004.08.10 Page No. : 1/4 Description The HMBT1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature..................................................................................................................... 150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C).............................................................................................
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