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HMBT4401XLT1G - General Purpose Transistor NPN Silicon

Download the HMBT4401XLT1G datasheet PDF. This datasheet also covers the HMBT4401XLT1G-HI variant, as both devices belong to the same general purpose transistor npn silicon family and are provided as variant models within a single manufacturer datasheet.

Features

  • RoHS Compliant and Halogen Free Ordering Information Device Marking HMBT4401XLT1G 2X Shipping 3000/Tape & Reel Maximum Ratings (TA=25oC) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics Parameter Total Device Dissipation FR-5 Board.
  • 1, TA=25oC Total Device Dissipation, Derate above 25oC Thermal Resistance, Junction to Ambient.
  • 1 Total Device Dissipation Alumina Su.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMBT4401XLT1G-HI-SINCERITY.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT4401XLT1G
Manufacturer HI-SINCERITY
File Size 201.30 KB
Description General Purpose Transistor NPN Silicon
Datasheet download datasheet HMBT4401XLT1G Datasheet

Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. HMBT4401XLT1G General Purpose Transistor NPN Silicon Features • RoHS Compliant and Halogen Free Ordering Information Device Marking HMBT4401XLT1G 2X Shipping 3000/Tape & Reel Maximum Ratings (TA=25oC) Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current-Continuous Symbol VCEO VCBO VEBO IC Thermal Characteristics Parameter Total Device Dissipation FR-5 Board*1, TA=25oC Total Device Dissipation, Derate above 25oC Thermal Resistance, Junction to Ambient*1 Total Device Dissipation Alumina Substrate*2, TA=25oC Total Device Dissipation, Derate above 25oC Thermal Resistance, Junction to Ambient*2 Junction and Storage Temperature *1 FR-5=1.0x0.75x0.062 in *2 Alumina=0.4x0.3x0.024 in. 99.5% alumina.
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