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HMBT8099 - NPN Transistor

Download the HMBT8099 datasheet PDF. This datasheet also covers the HMBT8099_Hi variant, as both devices belong to the same npn transistor family and are provided as variant models within a single manufacturer datasheet.

Description

Spec.

No.

: HE6826 Issued Date : 1993.10.27 Revised Date : 2002.10.25 Page No.

Maximum Temperatures Storage Temperature -55 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipa

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Note: The manufacturer provides a single datasheet file (HMBT8099_Hi-SincerityMocroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMBT8099
Manufacturer Hi-Sincerity Mocroelectronics
File Size 30.11 KB
Description NPN Transistor
Datasheet download datasheet HMBT8099 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HI-SINCERITY MICROELECTRONICS CORP. HMBT8099 NPN EPITAXIAL PLANAR TRANSISTOR Description Amplifier Transistor Spec. No. : HE6826 Issued Date : 1993.10.27 Revised Date : 2002.10.25 Page No. : 1/3 Absolute Maximum Ratings SOT-23 • Maximum Temperatures Storage Temperature ........................................................................................... -55 ~ +150 °C Junction Temperature.................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 225 mW • Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage .............................................................................
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